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SI3476DV-T1-GE3 I-Tech Specifications

MOSFET N-CH 80V 4.6A TSOP-6

Isibaluli Somkhiqizo Isibaluli senani
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Manufacturer Electro-Films (EFI) / Vishay
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 3V @ 250µA
Technology MOSFET (Metal Oxide)
Series TrenchFET®
Power Dissipation (Max) 2W (Ta), 3.6W (Tc)
Package / Case SOT-23-6 Thin, TSOT-23-6
Operating Temperature -55°C ~ 150°C (TJ)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds 195pF @ 40V
FET Type N-Channel
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Detailed Description N-Channel 80V 4.6A (Tc) 2W (Ta), 3.6W (Tc) Surface Mount 6-TSOP
Isibaluli Somkhiqizo Isibaluli senani
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) ±20V
Supplier Device Package 6-TSOP
Rds On (Max) @ Id, Vgs 93 mOhm @ 3.5A, 10V
Packaging Original-Reel®
Other Names SI3476DV-T1-GE3DKR
Mounting Type Surface Mount
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs 7.5nC @ 10V
FET Feature -
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 4.6A (Tc)
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