SI1400DL-T1-GE3 I-Tech Specifications

MOSFET N-CH 20V 1.6A SC-70-6

Isibaluli Somkhiqizo Isibaluli senani
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Manufacturer Electro-Films (EFI) / Vishay
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 600mV @ 250µA (Min)
Technology MOSFET (Metal Oxide)
Series TrenchFET®
Power Dissipation (Max) 568mW (Ta)
Package / Case 6-TSSOP, SC-88, SOT-363
Operating Temperature -55°C ~ 150°C (TJ)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Gate Charge (Qg) (Max) @ Vgs 4nC @ 4.5V
FET Feature -
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 1.6A (Ta)
Isibaluli Somkhiqizo Isibaluli senani
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) ±12V
Supplier Device Package SC-70-6 (SOT-363)
Rds On (Max) @ Id, Vgs 150 mOhm @ 1.7A, 4.5V
Packaging Original-Reel®
Other Names SI1400DL-T1-GE3DKR
Mounting Type Surface Mount
Lead Free Status / RoHS Status Lead free / RoHS Compliant
FET Type N-Channel
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Detailed Description N-Channel 20V 1.6A (Ta) 568mW (Ta) Surface Mount SC-70-6 (SOT-363)
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