FQP3N90 I-Tech Specifications

MOSFET N-CH 900V 3.6A TO-220

Isibaluli Somkhiqizo Isibaluli senani
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Manufacturer AMI Semiconductor / ON Semiconductor
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 5V @ 250µA
Technology MOSFET (Metal Oxide)
Series QFET®
Power Dissipation (Max) 130W (Tc)
Package / Case TO-220-3
Mounting Type Through Hole
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V
FET Feature -
Drain to Source Voltage (Vdss) 900V
Current - Continuous Drain (Id) @ 25°C 3.6A (Tc)
Isibaluli Somkhiqizo Isibaluli senani
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) ±30V
Supplier Device Package TO-220-3
Rds On (Max) @ Id, Vgs 4.25 Ohm @ 1.8A, 10V
Packaging Tube
Operating Temperature -55°C ~ 150°C (TJ)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds 910pF @ 25V
FET Type N-Channel
Drive Voltage (Max Rds On, Min Rds On) 10V
Detailed Description N-Channel 900V 3.6A (Tc) 130W (Tc) Through Hole TO-220-3
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