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FQI7N80TU I-Tech Specifications

MOSFET N-CH 800V 6.6A I2PAK

Isibaluli Somkhiqizo Isibaluli senani
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Manufacturer AMI Semiconductor / ON Semiconductor
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 5V @ 250µA
Technology MOSFET (Metal Oxide)
Series QFET®
Power Dissipation (Max) 3.13W (Ta), 167W (Tc)
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type Through Hole
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs 52nC @ 10V
FET Feature -
Drain to Source Voltage (Vdss) 800V
Current - Continuous Drain (Id) @ 25°C 6.6A (Tc)
Isibaluli Somkhiqizo Isibaluli senani
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) ±30V
Supplier Device Package I2PAK (TO-262)
Rds On (Max) @ Id, Vgs 1.5 Ohm @ 3.3A, 10V
Packaging Tube
Operating Temperature -55°C ~ 150°C (TJ)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds 1850pF @ 25V
FET Type N-Channel
Drive Voltage (Max Rds On, Min Rds On) 10V
Detailed Description N-Channel 800V 6.6A (Tc) 3.13W (Ta), 167W (Tc) Through Hole I2PAK (TO-262)
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