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FQD2N90TM I-Tech Specifications

MOSFET N-CH 900V 1.7A DPAK

Isibaluli Somkhiqizo Isibaluli senani
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Manufacturer AMI Semiconductor / ON Semiconductor
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 5V @ 250µA
Technology MOSFET (Metal Oxide)
Series QFET®
Power Dissipation (Max) 2.5W (Ta), 50W (Tc)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature -55°C ~ 150°C (TJ)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
FET Feature -
Drain to Source Voltage (Vdss) 900V
Current - Continuous Drain (Id) @ 25°C 1.7A (Tc)
Isibaluli Somkhiqizo Isibaluli senani
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) ±30V
Supplier Device Package D-Pak
Rds On (Max) @ Id, Vgs 7.2 Ohm @ 850mA, 10V
Packaging Cut Tape (CT)
Other Names FQD2N90TMCT
Mounting Type Surface Mount
Manufacturer Standard Lead Time 17 Weeks
Input Capacitance (Ciss) (Max) @ Vds 500pF @ 25V
FET Type N-Channel
Drive Voltage (Max Rds On, Min Rds On) 10V
Detailed Description N-Channel 900V 1.7A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount D-Pak
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