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FJV4102RMTF I-Tech Specifications

TRANS PREBIAS PNP 200MW SOT23-3

Isibaluli Somkhiqizo Isibaluli senani
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased
Manufacturer AMI Semiconductor / ON Semiconductor
Factory Lead Time 3 Weeks
Voltage - Collector Emitter Breakdown (Max) 50V
Transistor Type PNP - Pre-Biased
Resistor - Emitter Base (R2) 10 kOhms
Power - Max 200mW
Package / Case TO-236-3, SC-59, SOT-23-3
Mounting Type Surface Mount
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Detailed Description Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 200MHz 200mW Surface Mount SOT-23-3 (TO-236)
Current - Collector Cutoff (Max) 100nA (ICBO)
Base Part Number FJV4102
Isibaluli Somkhiqizo Isibaluli senani
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA
Supplier Device Package SOT-23-3 (TO-236)
Resistor - Base (R1) 10 kOhms
Packaging Cut Tape (CT)
Other Names FJV4102RMTFCT
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Frequency - Transition 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA, 5V
Current - Collector (Ic) (Max) 100mA
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